The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Oct. 09, 2008
Tat Ngai, Austin, TX (US);
Qi Wang, Sandy, UT (US);
Joelle Sharp, Herriiman, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor device having a strained semiconductor channel region overlying a heterostructure-semiconductor on a metal substrate includes a first semiconductor layer overlying a first metal layer. The first semiconductor layer has a first semiconductor material and a second semiconductor material in a relaxed heterostructure and is heavily doped. A second semiconductor layer overlies the first semiconductor layer and has a first semiconductor material and a second semiconductor material in a relaxed heterostructure. The second semiconductor layer is more lightly doped than the first semiconductor layer. A trench extends into the second semiconductor layer and a channel region has a strained layer of the first semiconductor material adjacent a trench sidewall. The strained channel region provides enhanced carrier mobility and improves performance of the field effect transistor.