The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Feb. 07, 2011
Byung-goo Jeon, Fishkill, NY (US);
Sung-chul Park, Fishkill, NY (US);
Nikki Edleman, Pawling, NY (US);
Alois Gutmann, Heverlee, BE;
Fang Chen, Singapore, SG;
Byung-Goo Jeon, Fishkill, NY (US);
Sung-Chul Park, Fishkill, NY (US);
Nikki Edleman, Pawling, NY (US);
Alois Gutmann, Heverlee, BE;
Fang Chen, Singapore, SG;
Infineon North, Durham, NC (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
International Business Machines Corporation, Armonk, NY (US);
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.