The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Sep. 19, 2008
Jun Liu, Brookfield, CT (US);
Mackenzie King, Southbury, CT (US);
Michael S. Darsillo, Landenberg, PA (US);
Karl E. Boggs, Hopewell Junction, NY (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Peter Wrschka, Phoenix, AZ (US);
Thomas H. Baum, New Fairfield, CT (US);
Jun Liu, Brookfield, CT (US);
Mackenzie King, Southbury, CT (US);
Michael S. Darsillo, Landenberg, PA (US);
Karl E. Boggs, Hopewell Junction, NY (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Peter Wrschka, Phoenix, AZ (US);
Thomas H. Baum, New Fairfield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.