The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8236592 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 07, 2012

Filed:

Jan. 12, 2007
Applicants:

Ryoung-han Kim, San Jose, CA (US);

Thomas Ingolf Wallow, San Carlos, CA (US);

Harry Jay Levinson, Saratoga, CA (US);

Jongwook Kye, Pleasanton, CA (US);

Alden R. Acheta, Brentwood, CA (US);

Inventors:

Ryoung-han Kim, San Jose, CA (US);

Thomas Ingolf Wallow, San Carlos, CA (US);

Harry Jay Levinson, Saratoga, CA (US);

Jongwook Kye, Pleasanton, CA (US);

Alden R. Acheta, Brentwood, CA (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a semiconductor device is provided including processing a wafer having a target material; forming a first pattern over the target material; forming a protection layer over the first pattern; and forming a second pattern, over the target material and not over the protection layer, without an etching step between the forming the first pattern and the forming the second pattern.


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