The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Nov. 14, 2003
Jei-wei Chang, Cupertino, CA (US);
Chao-peng Chen, Fremont, CA (US);
Chunping Luo, Milpitas, CA (US);
Shou-chen Kao, Fremont, CA (US);
Jei-Wei Chang, Cupertino, CA (US);
Chao-Peng Chen, Fremont, CA (US);
Chunping Luo, Milpitas, CA (US);
Shou-Chen Kao, Fremont, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.