The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Sep. 30, 2009
Wagdi Abadeer, Jericho, VT (US);
Lilian Kamal, Legal Representative, Saratoga, CA (US);
Kiran V Chatty, Williston, VT (US);
Robert J Gauthier, Jr., Hinesburg, VT (US);
Jed H Rankin, Richmond, VT (US);
Robert R Robison, Colchester, VT (US);
William Tonti, Essex Junction, VT (US);
Wagdi Abadeer, Jericho, VT (US);
Lilian Kamal, legal representative, Saratoga, CA (US);
Kiran V Chatty, Williston, VT (US);
Robert J Gauthier, Jr., Hinesburg, VT (US);
Jed H Rankin, Richmond, VT (US);
Robert R Robison, Colchester, VT (US);
William Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process expands the implanted regions such their boundaries align within a predetermined distance from the edge of a trench. The distances are proportionate for each trench and each adjacent isolation region.