The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Mar. 11, 2011
Thomas N. Adam, Poughkeepsie, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
Thomas N. Adam, Poughkeepsie, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Stress enhanced transistor devices and methods of fabricating the same are provided. In one embodiment, a transistor device comprises: a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers, wherein the semiconductor substrate comprises a channel region underneath the gate conductor and recessed regions on opposite sides of the channel region, wherein the recessed regions undercut the dielectric spacers to form undercut areas of the channel region; and epitaxial source and drain regions disposed in the recessed regions of the semiconductor substrate and extending laterally underneath the dielectric spacers into the undercut areas of the channel region.