The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2012

Filed:

Sep. 28, 2010
Applicants:

Igor Arsovski, Williston, VT (US);

John A. Fifield, Underhill, VT (US);

Robert M. Houle, Williston, VT (US);

Harold Pilo, Underhill, VT (US);

Inventors:

Igor Arsovski, Williston, VT (US);

John A. Fifield, Underhill, VT (US);

Robert M. Houle, Williston, VT (US);

Harold Pilo, Underhill, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit that includes memory containing wordlines and bitcells having SRAM storage elements and being connected to the wordlines. Wordline up-level assist circuitry is provided that is designed and configured to provide a plurality of selectable voltage values that can be selected to provide the wordline up-level voltage that is provided to the bitcells during a memory read cycle and/or write cycle. In one example, the voltage value selected is selected based on characterization of the as-fabricated bitcells so as to decrease the likelihood of the bitcells experiencing a stability failure.


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Arsovski, Igor. (2012). Sram having wordline up-level voltage adjustable to assist bitcell stability and design structure for same (U.S. Patent No. 8228713). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8228713

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