The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Sep. 01, 2010
Hyoung-hee Kim, Hwaseong-si, KR;
Yool Kang, Yongin-si, KR;
Seong-ho Moon, Yongin-si, KR;
Seok-hwan OH, Seoul, KR;
So-ra Han, Bucheon-si, KR;
Seong-woon Choi, Suwon-si, KR;
Hyoung-Hee Kim, Hwaseong-si, KR;
Yool Kang, Yongin-si, KR;
Seong-Ho Moon, Yongin-si, KR;
Seok-Hwan Oh, Seoul, KR;
So-Ra Han, Bucheon-si, KR;
Seong-Woon Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.