The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Dec. 28, 2009
Ha-jin Lim, Seoul, KR;
Dong-suk Shin, Yongin-si, KR;
Pan-kwi Park, Suwon-si, KR;
Jun-jung Kim, Hwaseong-si, KR;
Tae-gyun Kim, Suwon-si, KR;
Ha-Jin Lim, Seoul, KR;
Dong-Suk Shin, Yongin-si, KR;
Pan-Kwi Park, Suwon-si, KR;
Jun-Jung Kim, Hwaseong-si, KR;
Tae-Gyun Kim, Suwon-si, KR;
Abstract
A method of fabricating a semiconductor integrated circuit (IC) device can include forming a first silicide layer on at least a portion of a transistor on a substrate, forming nitrogen in the first silicide layer to form a second silicide layer, forming a first stress layer having a tensile stress on the substrate having the transistor formed thereon, and irradiating the first stress layer with ultraviolet (UV) light to form a second stress layer having greater tensile stress than the first stress layer.