The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jun. 30, 2011
Sang-hun Jeon, Gyeonggi-do, KR;
Moon-sook Lee, Seoul, KR;
Byeong-ok Cho, Seoul, KR;
Abstract
A method of manufacturing a CMOS transistor can be provided by forming first and second gate electrodes on a substrate and forming a gate insulation layer on the first and second gate electrodes. A semiconductor channel material having a first conductivity type can be formed on the gate insulation layer. A pair of ohmic contacts can be formed on the semiconductor channel material such that the ohmic contacts cross over both side portions of the first gate electrode, respectively. A pair of Schottky contacts can be formed on the semiconductor channel material such that the Schottky contacts cross over both side portions of the second gate electrode, respectively.