The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Apr. 02, 2008
Thanh Nghia Tu, San Jose, CA (US);
Qi Luo, San Jose, CA (US);
Chia Wei Yang, Hsinchu, TW;
David Heald, Solvang, CA (US);
Evgeni Gousev, Saratoga, CA (US);
Chih-wei Chiang, Hsin-Chu, TW;
Thanh Nghia Tu, San Jose, CA (US);
Qi Luo, San Jose, CA (US);
Chia Wei Yang, Hsinchu, TW;
David Heald, Solvang, CA (US);
Evgeni Gousev, Saratoga, CA (US);
Chih-Wei Chiang, Hsin-Chu, TW;
Qualcomm Mems Technologies, Inc., San Diego, CA (US);
Abstract
Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.