The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Dec. 17, 2009
Applicant:
Wilfried Von Ammon, Hochburg/Ach, AT;
Inventor:
Wilfried von Ammon, Hochburg/Ach, AT;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.
von Ammon, Wilfried. (2012). Process and apparatus for producing a single crystal of semiconductor material (U.S. Patent No. 8221550). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8221550
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile