The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jan. 25, 2010
Hsin Chang Lin, Hsin-Chu County, TW;
Wen-chien Huang, Hsin-Chu County, TW;
Hsin Chang Lin, Hsin-Chu County, TW;
Wen-Chien Huang, Hsin-Chu County, TW;
Yield Microelectronics Corp., Hsin-Chu County, TW;
Abstract
A non-volatile memory low voltage and high speed erasure method, the non-volatile memory is realized through disposing a stacked gate structure having a control gate and a floating gate on a semiconductor substrate or in an isolation well, such that adequate hot holes are generated in proceeding with low voltage and high speed erasure operation through a drain reverse bias and making changes to gate voltage. In addition, through applying positive and negative voltages on a drain, a gate, and a semiconductor substrate or well regions, adequate hot holes are generated, so as to lower the absolute voltage in achieving the objective of reducing voltage of erasing memory.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile