The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jun. 07, 2010
Haiwen Xi, Prior Lake, MN (US);
Dexin Wang, Eden Prairie, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Paul E. Anderson, Eden Prairie, MN (US);
Song S. Xue, Edina, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Dexin Wang, Eden Prairie, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Paul E. Anderson, Eden Prairie, MN (US);
Song S. Xue, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.