The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Mar. 07, 2007
Tong Yan Tee, Singapore, SG;
Xueren Zhang, Singapore, SG;
Shanzhong Wang, Singapore, SG;
Valeriy Nosik, Singapore, SG;
Jijie Zhou, Singapore, SG;
Sridhar Idapalapati, Singapore, SG;
Subodh Mhaisalkar, Singapore, SG;
Zhi Yuan Shane Loo, Singapore, SG;
Tong Yan Tee, Singapore, SG;
Xueren Zhang, Singapore, SG;
Shanzhong Wang, Singapore, SG;
Valeriy Nosik, Singapore, SG;
Jijie Zhou, Singapore, SG;
Sridhar Idapalapati, Singapore, SG;
Subodh Mhaisalkar, Singapore, SG;
Zhi Yuan Shane Loo, Singapore, SG;
STMicroelectronics Asia Pacific Pte., Ltd., Singapore, SG;
Nanyang Technological University, Singapore, SG;
Abstract
A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.