The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Sep. 14, 2010
Yoshinori Tsuchiya, Clifton Park, NY (US);
Yoshinori Tsuchiya, Clifton Park, NY (US);
Kabushiki Kaihsa Toshiba, Tokyo, JP;
Abstract
MOSFETs and methods of making MOSFETs are provided. According to one embodiment, a semiconductor device includes a substrate and a Metal-Oxide-Semiconductor (MOS) transistor that includes a semiconductor region formed on the substrate, a source region and drain region formed in the semiconductor region that are separated from each other, a channel region formed in the semiconductor region that separates the source region and the drain region, an interfacial oxide layer (IL) formed on the channel region into which at least one element disparate from Si, O, or N is incorporated at a peak concentration greater than 1×10atoms/cm, and a high-k dielectric layer formed on the interfacial oxide layer having a high-k/IL interface at a depth substantially adjacent to the IL. In addition, at least one depth of peak density of the incorporated element(s) is located substantially below the high-k/IL interface.