The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jul. 09, 2010
Akihiro Usujima, Yokohama, JP;
Shigeo Satoh, Yokohama, JP;
Akihiro Usujima, Yokohama, JP;
Shigeo Satoh, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a first and a second isolation insulating film to define a first, a second, a third and a fourth region, forming a first insulating film, implanting a first impurity of a first conductivity type through the first insulating film into the first, the second and the fourth region at a first depth, forming a second insulating film thinner than the first insulating film, implanting a second impurity of a second conductivity type through the second insulating film into the third region at a second depth in the semiconductor substrate, implanting a third impurity of the second conductivity type into the third region at a third depth shallower than the second depth, forming a first transistor of the first conductivity type in the third region, and forming a second transistor of the second conductivity type in the fourth region.