The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

May. 07, 2009
Applicants:

Nobuyuki Kaji, Kawasaki, JP;

Masato Ofuji, Honjo, JP;

Yasuyoshi Takai, Kawasaki, JP;

Takehiko Kawasaki, Kamakura, JP;

Norio Kaneko, Atsugi, JP;

Ryo Hayashi, Yokohama, JP;

Inventors:

Nobuyuki Kaji, Kawasaki, JP;

Masato Ofuji, Honjo, JP;

Yasuyoshi Takai, Kawasaki, JP;

Takehiko Kawasaki, Kamakura, JP;

Norio Kaneko, Atsugi, JP;

Ryo Hayashi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 21/66 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.


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