Quantitative evaluation device of atomic vacancies existing in silicon wafer, method for the device, silicon wafer manufacturing method, and thin-film oscillator

Abstract

A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation deviceis equipped with a detectorincluding an ultrasonic generatorand an ultrasonic receiver, a silicon sampleformed with the ultrasonic generatorand the ultrasonic receiveron a silicon wafercomprising perfect crystal silicon, a magnetic force generatorfor applying an external magnetic field to the silicon sample, and a coolercapable of cooling and controlling the silicon sampleto a range of temperatures lower than or equal to 50K. The ultrasonic generatorand the ultrasonic receiverare each equipped with a transducerincluding a thin film oscillatorformed from a high-polymer material with a physical property capable of following an expanding action of a silicon waferin association with a temperature drop in the above range of the temperatures and whose molecular axes are oriented in the direction of an electric field when decreasing temperature with the electric field applied thereto and further, including electrodesfor applying an electric field to the thin film oscillator