The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Sep. 29, 2010
Ke-ying Su, Hsin-Chu, TW;
Chia-ming Ho, Banciao, TW;
Gwan Sin Chang, Hsin-Chu, TW;
Chien-wen Chen, Xizhi, TW;
Ke-Ying Su, Hsin-Chu, TW;
Chia-Ming Ho, Banciao, TW;
Gwan Sin Chang, Hsin-Chu, TW;
Chien-Wen Chen, Xizhi, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A system and method for extracting the parasitic contact/via capacitance in an integrated circuit are provided. Parasitic extraction using this system can lead to an improved accuracy on contact/via parasitic capacitance extraction by taking into account of the actual contact/via shape and size variation. The common feature of the various embodiments includes the step of generating a technology file, in which the contact/via capacitance in the capacitance table is derived from an effective contact/via width table. Each element of the effective contact/via width table is calibrated to have a parasitic capacitance matching to that of an actual contact/via configuration occurring in an IC.