The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Sep. 21, 2011
Tsuyoshi Fujiwara, Hamura, JP;
Toshinori Imai, Ome, JP;
Kenichi Takeda, Tokorozawa, JP;
Hiromi Shimamoto, Iruma, JP;
Tsuyoshi Fujiwara, Hamura, JP;
Toshinori Imai, Ome, JP;
Kenichi Takeda, Tokorozawa, JP;
Hiromi Shimamoto, Iruma, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.