The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Apr. 13, 2007
Arjun Kar-roy, Irvine, CA (US);
Marco Racanelli, Santa Ana, CA (US);
David J. Howard, Irvine, CA (US);
Arjun Kar-Roy, Irvine, CA (US);
Marco Racanelli, Santa Ana, CA (US);
David J. Howard, Irvine, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
According to an exemplary embodiment, a method for fabricating a backside through-wafer via in a processed wafer includes forming a through-wafer via opening through a substrate and extending the through-wafer via opening through at least one interlayer dielectric layer situated over the substrate. The method further includes forming a metal layer in the through-wafer via opening, where the metal layer forms an electrical connection to substrate. The metal layer is also in electrical contact with an interconnect metal segment situated above the at least one interlayer dielectric layer. The method further includes performing a thinning process to reduce the substrate to a target thickness before forming the through-wafer via opening. The method further includes forming an electrically conductive passivation layer on the metal layer and over a bottom surface of the substrate, where the electrically conductive passivation layer is in electrical contact with the metal layer and the substrate.