The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Jan. 21, 2011
Pui Chung Simon Law, Hong Kong, HK;
Dan Yang, Hong Kong, HK;
Xunqing Shi, Hong Kong, HK;
Hong Kong Applied Science and Technology Research Institute Company Limited, Hong Kong Science Park, Shatin, New Territories, Hong Kong, CN;
Abstract
High optical efficiency CMOS image sensors capable of sustaining pixel sizes less than 1.2 microns are provided. Due to high photodiode fill factors and efficient optical isolation, microlenses are unnecessary. Each sensor includes plural imaging pixels having a photodiode structure on a semiconductor substrate adjacent a light-incident upper surface of the image sensor. An optical isolation grid surrounds each photodiode structure and defines the pixel boundary. The optical isolation grid extends to a depth of at least the thickness of the photodiode structure and prevents incident light from penetrating through the incident pixel to an adjacent pixel. A positive diffusion plug vertically extends through a portion of the photodiode structure. A negative diffusion plug vertically extends into the semiconductor substrate for transferring charge generated in the photodiode to a charge collecting region within the semiconductor substrate. Pixel circuitry positioned beneath the photodiode controls charge transfer to image readout circuitry.