The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Nov. 13, 2008
Richard Peter Smith, Carrboro, NC (US);
Scott T. Sheppard, Chapel Hill, NC (US);
Adam William Saxler, Durham, NC (US);
Yifeng Wu, Goleta, CA (US);
Richard Peter Smith, Carrboro, NC (US);
Scott T. Sheppard, Chapel Hill, NC (US);
Adam William Saxler, Durham, NC (US);
Yifeng Wu, Goleta, CA (US);
Cree, Inc., Durham, NC (US);
Abstract
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (V) of about from about 28 to about 70 volts, a gate to source voltage (V) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile