The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Feb. 11, 2011
Methods of forming a hole having a vertical profile and semiconductor devices having a vertical hole
Hyo-san Lee, Suwon-si, KR;
Bo-un Yoon, Seoul, KR;
Kun-tack Lee, Suwon-si, KR;
Dae-hyuk Kang, Hwaseong-si, KR;
Seong-ho Moon, Yongin-si, KR;
So-ra Han, Bucheon-si, KR;
Hyo-San Lee, Suwon-si, KR;
Bo-Un Yoon, Seoul, KR;
Kun-Tack Lee, Suwon-si, KR;
Dae-Hyuk Kang, Hwaseong-si, KR;
Seong-Ho Moon, Yongin-si, KR;
So-Ra Han, Bucheon-si, KR;
Abstract
In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.