The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Mar. 01, 2010
Jong-myeong Lee, Seongnam-si, KR;
Sang-woo Lee, Seoul, KR;
Gil-heyun Choi, Seoul, KR;
Jong-won Hong, Suwon-si, KR;
Kyung-in Choi, Chuncheon-si, KR;
Hyun-bae Lee, Suwon-si, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Sang-Woo Lee, Seoul, KR;
Gil-Heyun Choi, Seoul, KR;
Jong-Won Hong, Suwon-si, KR;
Kyung-In Choi, Chuncheon-si, KR;
Hyun-Bae Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.