The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Oct. 26, 2009
Jason Hong, San Jose, CA (US);
Daniel Tang, Fremont, CA (US);
Jason Hong, San Jose, CA (US);
Daniel Tang, Fremont, CA (US);
Advanced Ion Beam Technology, Inc., San Jose, CA (US);
Abstract
A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized.