The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Jun. 24, 2010
Applicants:

Kai Di Feng, Hopewell Junction, NY (US);

Louis Lu-chen Hsu, Fishkill, NY (US);

Ping-chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Stormville, NY (US);

Inventors:

Kai Di Feng, Hopewell Junction, NY (US);

Louis Lu-Chen Hsu, Fishkill, NY (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Stormville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

Programmable fuse-type through silicon vias (TSVs) in silicon chips are provided with non-programmable TSVs in the same chip. The programmable fuse-type TSVs may employ a region within the TSV structure having sidewall spacers that restrict the cross-sectional conductive path of the TSV adjacent a chip surface contact pad. Application of sufficient current by programming circuitry causes electromigration of metal to create a void in the contact pad and, thus, an open circuit. Programming may be carried out by complementary circuitry on two adjacent chips in a multi-story chip stack.


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