The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Apr. 30, 2010
Ting-chang Chang, Kaohsiung, TW;
Fu-yen Jian, Ziguan Township, TW;
Shih-ching Chen, Xinzhuang, TW;
Te-chih Chen, Neipu Township, TW;
Ting-Chang Chang, Kaohsiung, TW;
Fu-Yen Jian, Ziguan Township, TW;
Shih-Ching Chen, Xinzhuang, TW;
Te-Chih Chen, Neipu Township, TW;
Acer Incorporated, Taipei, TW;
Abstract
A method for operating a memory device is provided. In accordance with the method, the charges are stored in a source storage region, a drain storage region, and a channel storage region of a charge storage layer which respectively correspond to a source, a drain, and a channel of a SONOS transistor, thereby achieving 3-bit information storage in one cell. The channel storage region is programmed and erased by FN tunneling. Both of the source storage region and the drain storage region are programmed by channel hot electrons and erased by source-side or drain-side FN tunneling. The present invention can store three-bit data per cell, such that the storage density of the memory device can be substantially increased.