The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Dec. 18, 2009
Joan K. Bosworth, San Jose, CA (US);
Elizabeth A. Dobisz, San Jose, CA (US);
Ricardo Ruiz, San Bruno, CA (US);
Franck D. Rose Dit Rose, San Jose, CA (US);
Joan K. Bosworth, San Jose, CA (US);
Elizabeth A. Dobisz, San Jose, CA (US);
Ricardo Ruiz, San Bruno, CA (US);
Franck D. Rose dit Rose, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure comprises a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. A method, according to another embodiment, comprises forming a block copolymer layer on a substrate, inducing self assembly of the block copolymer layer, selectively degrading a block polymer from the block copolymer layer, forming a porous membrane over the block copolymer layer, and removing a portion of the block copolymer layer for defining a plurality of nanostructures extending upwardly from the substrate after forming the porous membrane over the block copolymer layer. Other systems and methods are disclosed as well.