The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2012

Filed:

Apr. 14, 2011
Applicants:

Wei Tian, Bloomington, MN (US);

Insik Jin, Eagan, MN (US);

Venugopalan Vaithyanathan, Bloomington, MN (US);

Haiwen Xi, San Jose, CA (US);

Michael Xuefei Tang, Bloomington, MN (US);

Brian Lee, Boston, MA (US);

Inventors:

Wei Tian, Bloomington, MN (US);

Insik Jin, Eagan, MN (US);

Venugopalan Vaithyanathan, Bloomington, MN (US);

Haiwen Xi, San Jose, CA (US);

Michael Xuefei Tang, Bloomington, MN (US);

Brian Lee, Boston, MA (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.


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