The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8203210 B1

Expired

Date of Patent:

Jun. 19, 2012

Filed:

Sep. 15, 2010

Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers

Applicants:

Takeshi Furusawa, Tokyo, JP;

Takao Kamoshima, Tokyo, JP;

Masatsugu Amishiro, Tokyo, JP;

Naohito Suzumura, Tokyo, JP;

Shoichi Fukui, Tokyo, JP;

Masakazu Okada, Tokyo, JP;

Inventors:

Takeshi Furusawa, Tokyo, JP;

Takao Kamoshima, Tokyo, JP;

Masatsugu Amishiro, Tokyo, JP;

Naohito Suzumura, Tokyo, JP;

Shoichi Fukui, Tokyo, JP;

Masakazu Okada, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Anh Mai

Int. Cl.

CPC ...

H01L 23/48 (2006.01);

U.S. Cl.

CPC ...

Abstract

The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating filmsare formed. In the insulating filmsa contact hole is formed and a plug is embedded therein. Over the insulating filmin which the plug is embedded, insulating filmsare formed and an opening is formed in the insulating filmsand a wire is embedded therein. The insulating filmis an etching stopper film when etching the insulating filmin order to form the opening, containing silicon and carbon. The insulating filmhas a high hygroscopicity and the insulating filmhas a low moisture resistance, however, by interposing the insulating filmtherebetween and making the insulating filmhave a higher density of the number of Si (silicon) atoms than that of the insulating film, an electrically weak interface is prevented from being formed.

Find Patent Forward Citations

Furusawa, Takeshi. (2012). Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers (U.S. Patent No. 8203210). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8203210

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