The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Feb. 09, 2011
Applicants:
Jiunn-yih Chyan, Hsinchu, TW;
Hung-chi Chien, Hsinchu, TW;
Kun-lin Yang, Hsinchu, TW;
Wen-ching Hsu, Hsinchu, TW;
Inventors:
Jiunn-Yih Chyan, Hsinchu, TW;
Hung-Chi Chien, Hsinchu, TW;
Kun-Lin Yang, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Assignee:
Sino-American Silicon Products Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.