The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Oct. 07, 2009
Robert James Pascoe Lander, Leuven, BE;
Robert James Pascoe Lander, Leuven, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a semiconductor device and method of fabricating a semiconductor device. In an embodiment, the semiconductor device is a finFET device. In an embodiment, the semiconductor device is a silicon on insulator (SOI) device. A method of fabricating the semiconductor device includes providing a substrate, forming an oxide layer on the substrate, forming a fin on a portion of the oxide layer, forming a high k dielectric layer on a portion of the oxide layer and on a portion of the fin, forming a tuned, stressed metal gate on the dielectric layer, and forming a poly-cap on the metal gate. The method of fabrication provided may allow use of SOI substrate or bulk silicon substrates.