The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Apr. 14, 2009
Allan Gu, Alhambra, CA (US);
Avideh Zakhor, Berkeley, CA (US);
Peiran Gao, Irvine, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Optical proximity correction (OPC) is a technique used to compensate for optical distortions, process effects, or both, by modifying a pattern that is used during lithography. A reference OPC model is used to create an OPC design layout pattern based on pre-distorting a desired design layout pattern associated with an integrated circuit (IC). The OPC design layout pattern is used when the IC is produced, such that the fabricated IC ideally matches the desired design layout pattern. The present invention relates to using a regression OPC model to create estimated fragment movements of the desired design layout pattern. The estimated fragment movements are then provided as initial fragment movements to the reference OPC model, which then creates the OPC design layout pattern. The initial fragment movements provided by the regression OPC model may reduce the number of iterations needed by the reference OPC model, thereby reducing computation time.