The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2012

Filed:

Jul. 02, 2010
Applicant:

Chung Zen Chen, Hsinchu, TW;

Inventor:

Chung Zen Chen, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for controlling standby current coming from bit line leakage in random access memory devices comprises the steps of: continuously deactivating a pre-charge equalization circuit providing a pre-charge voltage to a pair of complementary bit lines of a memory cell if the memory cell is in a self-refresh mode, a standby mode or an active mode; temporarily activating the pre-charge equalization circuit before the memory cell is refreshed if the memory cell is in a self-refresh mode or a standby mode; and temporarily activating the pre-charge equalization circuit before the memory cell is refreshed or accessed if the memory cell is in an active mode.


Find Patent Forward Citations

Chen, Chung. (2012). Circuit and method for controlling standby leakage current in random access memory devices (U.S. Patent No. 8199593). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8199593

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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