The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
May. 17, 2010
Yoshinori Ikebuchi, Tokyo, JP;
Yoshinori Ikebuchi, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
To provide a semiconductor device including a first silicon pillar, an interlayer dielectric film provided on an upper surface of the first silicon pillar and having a through-hole filled with a conductive material, and a first-diffusion-layer contact plug provided on an upper-side opening of the through-hole. An area of a lower-side opening of the through-hole is equal to an area of the upper surface of the first silicon pillar, and an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole. With this configuration, an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.