The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Dec. 08, 2008
Stanislav Ivanovich Soloviev, Albany, NY (US);
Ho-young Cha, Seoul, KR;
Peter Micah Sandvik, Niskayuna, NY (US);
Alexey Vert, Schenectady, NY (US);
Jody Alan Fronheiser, Selkirk, NY (US);
Stanislav Ivanovich Soloviev, Albany, NY (US);
Ho-Young Cha, Seoul, KR;
Peter Micah Sandvik, Niskayuna, NY (US);
Alexey Vert, Schenectady, NY (US);
Jody Alan Fronheiser, Selkirk, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.