The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Dec. 14, 2009
Frederick T. Chen, Hsinchu County, TW;
Ming-jinn Tsai, Hsinchu, TW;
Wei-su Chen, Hsinchu, TW;
Heng-yuan Lee, Hsinchu County, TW;
Frederick T. Chen, Hsinchu County, TW;
Ming-Jinn Tsai, Hsinchu, TW;
Wei-Su Chen, Hsinchu, TW;
Heng-Yuan Lee, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.