The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2012

Filed:

Nov. 19, 2009
Applicants:

William S. Wong, San Carlos, CA (US);

Sanjiv Sambandan, Palo Alto, CA (US);

Tse Nga NG, Palo Alto, CA (US);

Robert A. Street, Palo Alto, CA (US);

Inventors:

William S. Wong, San Carlos, CA (US);

Sanjiv Sambandan, Palo Alto, CA (US);

Tse Nga Ng, Palo Alto, CA (US);

Robert A. Street, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic. A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.


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