The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Apr. 21, 2009
Applicants:
Miwa Watai, Sanmu, JP;
Kazuya Saito, Sanmu, JP;
Takashi Komatsu, Sanmu, JP;
Atsushi Ota, Sanmu, JP;
Shunji Kuroiwa, Sanmu, JP;
Miho Shimizu, Sanmu, JP;
Inventors:
Miwa Watai, Sanmu, JP;
Kazuya Saito, Sanmu, JP;
Takashi Komatsu, Sanmu, JP;
Atsushi Ota, Sanmu, JP;
Shunji Kuroiwa, Sanmu, JP;
Miho Shimizu, Sanmu, JP;
Assignee:
ULVAC, Inc., Chigasaki-Shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a solar cell, includes: forming, on a silicon substrate whose conductivity type is p-type or n-type, a silicon layer including a dopant whose conductivity type is different from that of the silicon substrate; and diffusing the dopant included in the silicon layer into the silicon substrate by heat-treating the silicon layer.