The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Sep. 03, 2008
Keisuke Kishimoto, Yokohama, JP;
Hirokazu Komuro, Yokohama, JP;
Satoshi Ibe, Yokohama, JP;
Takuya Hatsui, Tokyo, JP;
Kazuhiro Asai, Kawasaki, JP;
Shimpei Otaka, Yokohama, JP;
Hiroto Komiyama, Tokyo, JP;
Keisuke Kishimoto, Yokohama, JP;
Hirokazu Komuro, Yokohama, JP;
Satoshi Ibe, Yokohama, JP;
Takuya Hatsui, Tokyo, JP;
Kazuhiro Asai, Kawasaki, JP;
Shimpei Otaka, Yokohama, JP;
Hiroto Komiyama, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an aperture being formed on one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from the aperture on the one surface, from the one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from the one surface through the aperture of the etching mask layer.