The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8194438 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 05, 2012

Filed:

Feb. 12, 2009
Applicants:

Yongchul Ahn, Eagan, MN (US);

Antoine Khoueir, Apple Valley, MN (US);

Yong LU, Rosemount, MN (US);

Hongyue Liu, Maple Grove, MN (US);

Inventors:

Yongchul Ahn, Eagan, MN (US);

Antoine Khoueir, Apple Valley, MN (US);

Yong Lu, Rosemount, MN (US);

Hongyue Liu, Maple Grove, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Non-volatile static random access memory (nvSRAM) that has a six transistor static random access memory (6T SRAM) cell electrically connected to a non-volatile random access memory (nvRAM) cell. The nvRAM cell has first and second variable magnetic resistors and first, second and third transistors.


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Ahn, Yongchul. (2012). Nvsram having variable magnetic resistors (U.S. Patent No. 8194438). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8194438

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