The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Aug. 14, 2009
John Chen, Palo Alto, CA (US);
IL Kwan Lee, San Ramon, CA (US);
Hong Chang, Cupertino, CA (US);
Wenjun LI, Shanghai, CN;
Anup Bhalla, Santa Clara, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
John Chen, Palo Alto, CA (US);
Il Kwan Lee, San Ramon, CA (US);
Hong Chang, Cupertino, CA (US);
Wenjun Li, Shanghai, CN;
Anup Bhalla, Santa Clara, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Alpha and Omega Semiconductor, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device embodiment includes a substrate, an active gate trench in the substrate, and an asymmetric trench in the substrate. The asymmetric trench has a first trench wall and a second trench wall, the first trench wall is lined with oxide having a first thickness, and the second trench wall is lined with oxide having a second thickness that is different from the first thickness. Another semiconductor device embodiment includes a substrate, an active gate trench in the substrate; and a source polysilicon pickup trench in the substrate. The source polysilicon pickup trench includes a polysilicon electrode, and top surface of the polysilicon electrode is below a bottom of a body region. Another semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.