The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2012

Filed:

Sep. 04, 2008
Applicants:

Gary B. Bronner, Los Altos, CA (US);

Ming LI, Fremont, CA (US);

Donald R. Mullen, Mountain View, CA (US);

Frederick Ware, Los Altos Hills, CA (US);

Kevin S. Donnelly, Los Altos, CA (US);

Inventors:

Gary B. Bronner, Los Altos, CA (US);

Ming Li, Fremont, CA (US);

Donald R. Mullen, Mountain View, CA (US);

Frederick Ware, Los Altos Hills, CA (US);

Kevin S. Donnelly, Los Altos, CA (US);

Assignee:

Rambus Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed.


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