The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Apr. 17, 2009
Robert Kuo-chang Yang, Campbell, CA (US);
Muhammed Ayman Shibib, San Jose, CA (US);
Richard A. Blanchard, Los Altos, CA (US);
Robert Kuo-Chang Yang, Campbell, CA (US);
Muhammed Ayman Shibib, San Jose, CA (US);
Richard A. Blanchard, Los Altos, CA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A semiconductor device includes a source region, a drain region, a gate region, and a drift region. The drift region further includes an active drift region and inactive floating charge control (FCC) regions. The active drift region conducts current between the source region and the drain region when voltage is applied to the gate region. The inactive FCC regions, which field-shape the active drift region to improve breakdown voltage, are vertically stacked in the drift region and are separated by the active drift region. Vertically stacking the inactive FCC regions reduce on-resistance while maintaining higher breakdown voltages.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile