The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2012

Filed:

Jul. 13, 2009
Applicants:

Antoine Khoueir, Apple Valley, MN (US);

Yongchul Ahn, Eagan, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Shuiyan Huang, Apple Valley, MN (US);

Ivan Petrov Ivanov, Apple Valley, MN (US);

Inventors:

Antoine Khoueir, Apple Valley, MN (US);

Yongchul Ahn, Eagan, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Shuiyan Huang, Apple Valley, MN (US);

Ivan Petrov Ivanov, Apple Valley, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.


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