The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8193005 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 05, 2012

Filed:

Dec. 13, 2010
Applicants:

Charles J. Parrish, Milton, VT (US);

Steven M. Shank, Jericho, VT (US);

Inventors:

Charles J. Parrish, Milton, VT (US);

Steven M. Shank, Jericho, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for the controlled manufacture of high aspect ratio features. The method may include forming a layer stack on a top surface of a substrate and forming features in the layers of the layer stack. The high aspect ratio features may be defined using a resist layer that is patterned with a photolithographic condition. After removing at least one of the layers removed from the top of the layer stack, a feature dimension may be measured for features at different locations on the substrate. The method may further include changing the photolithographic condition based on the measured dimension and processing another substrate using the changed photolithographic condition.


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Parrish, Charles. (2012). Mems process method for high aspect ratio structures (U.S. Patent No. 8193005). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8193005

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