The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8192809 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 05, 2012

Filed:

May. 11, 2009
Applicants:

Angelo Gaitas, Ann Arbor, MI (US);

Bhaskar Mitra, New Brunswick, NJ (US);

Amar Basu, Novi, MI (US);

Weibin Zhu, Ann Arbor, MI (US);

Inventors:

Angelo Gaitas, Ann Arbor, MI (US);

Bhaskar Mitra, New Brunswick, NJ (US);

Amar Basu, Novi, MI (US);

Weibin Zhu, Ann Arbor, MI (US);

Assignee:

Picocal, Inc, Ann Arbor, MI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01T 14/00 (2006.01); H05H 1/48 (2006.01); C23C 8/00 (2006.01); H05B 6/02 (2006.01); H05B 6/24 (2006.01); H05B 6/00 (2006.01); C23C 14/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is a method for localized chemical vapor deposition (CVD) for localized growing for example for carbon nanotubes (CNT), nanowires, and oxidation using a heated tip or an array of heated tips to locally heat the area of interest. As the tips moved, material such as CNTs grows in the direction of movement. The Scanning Probe Growth (SPG) or nanoCVD technique has similarities to the CVD growth; however it allows for controlled synthesis and direction and eliminates the need for masks.


Find Patent Forward Citations

Gaitas, Angelo. (2012). Scanning probe assisted localized cnt growth (U.S. Patent No. 8192809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8192809

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